sot-23 plastic-encapsulate mosfets CJ2310 n-channel mosfet description the CJ2310 uses advanced trench tec hnology to provide excellent r ds(on) , low gate charge and operation with gate voltage as low as 2.5v. this device is suitable for use as a batte ry protection or in other switching application. features ? high power and current handing capability ? lead free product is acquired ? surface mount package application ? battery switch ? dc/dc converter marking: s10 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current i d 3 a pulsed drain current (note 1) i dm 10 a power dissipation p d 0.35 w thermal resistance from junction to ambient (note 2) r ja 357 /w junction temperature t j 150 storage temperature t stg -55~+150 1 of 3 sales@zpsemi.com www.zpsemi.com CJ2310 c,jun,2013
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 60 v zero gate voltage drain current i dss v ds =60v,v gs = 0v 1 a gate-body leakage current i gss v gs =20v, v ds = 0v 100 na gate threshold voltage (note 3) v gs(th) v ds =v gs , i d =250a 0.5 2 v v gs =10v, i d =3a 105 m ? drain-source on-resistance (note 3) r ds(on) v gs =4.5v, i d =3a 125 m ? forward tranconductance (note 3) g fs v ds =15v, i d =2a 1.4 s diode forward voltage (note 3) v sd i s =3a, v gs = 0v 1.2 v dynamic characteristics (note 4) input capacitance c iss 247 pf output capacitance c oss 34 pf reverse transfer capacitance c rss v ds =30v,v gs =0v,f =1mhz 19.5 pf switching characteristics (note 4) turn-on delay time t d(on) 6 ns turn-on rise time t r 15 ns turn-off delay time t d(off) 15 ns turn-off fall time t f v gs =10v,v dd =30v, i d =1.5a,r gen =1 ? 10 ns total gate charge q g 6 nc gate-source charge q gs 1 nc gate-drain charge q gd v ds =30v,v gs =4.5v,i d =3a 1.3 nc notes : 1. repetitive rating : pulse width limited by junction temperature. 2. surface mounted on fr4 board , t 10s. 3. pulse test : pulse width 300s, duty cycle 0.5%. 4. guaranteed by design, not subject to producting. 2 of 3 sales@zpsemi.com www.zpsemi.com CJ2310 c,jun,2013
012345 0 5 10 15 0246810 0 100 200 300 400 01234 0 2 4 6 8 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 10 25 50 75 100 125 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 246810 20 40 60 80 100 120 140 v gs =5v 4v 3.0v v gs =2.5v drain current i d (a) drain to source voltage v ds (v) pulsed v gs =2.0v gate to source voltage v gs (v) on-resistance r ds(on) (m ? ) i d =3a t a =25 pulsed v gs ?? r ds(on) drain current i d (a) gate to source voltage v gs (v) v ds =5.0v pulsed t a =100 t a =25 transfer characteristics source current i s (a) source to drain voltage v sd (v) t a =25 pulsed v sd i s ?? output characteristics threshold voltage v th (v) junction temperature t j ( ) i d =250ua threshold voltage vgs=10v drain current i d (a) on-resistance r ds(on) (m ? ) i d ?? r ds(on) t a =25 pulsed vgs=4.5v 0.5 3 of 3 sales@zpsemi.com www.zpsemi.com CJ2310 c,jun,2013
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